Principal Engineer

Job Summary

Principal Engineer, GaN Device Engineer , in charge of development of Gallium Nitride (GaN) power devices for high-efficiency power conversion. The candidate will possess expertise in GaN device design & physics to drive high performance/robustness technology. In addition, have an in-depth understanding of trapping mechanisms and relevant characterization techniques with hands-on experience. With strong communication skills in cross-functional teams to drive development path

[Must]

[Good-to-Have]

- Experience with TCAD simulation such as Sentaurus or Silvaco.
- Reliability failure model and degradation mechanism
- Familiar with AEC-Q101 standard is “plus”

Responsibilities

Drive technical understanding of GaN device physics, charge trapping mechanisms, and device reliability behavior.; Define and evaluate new device architectures to improve performance, robustness, and competitive differentiation.; Technical leadership in advanced device characterization, data analysis, and root-cause investigation to drive performance/ yield/ reliability improvement; Collaborate with cross-functional teams to guide technology development and accelerate commercialization of GaN products.

Requirements

Ph.D. is preferred or M.S. in Electrical Engineering or a related field with 10+ years of semiconductor device R&D experience with major focus on GaN technology.; Hands-on experience with characterization techniques and trap analysis: Pulsed I-V (gate-lag and drain-lag), Transient drain current, MOS Interface trap analysis, but not limited as listed.; Proven technical leadership and ability to work effectively across multidisciplinary teams.; Fluent in both English/Chinese; Business travel is required.