BAW Device Engineer (Starlink/Akoustis)

Akoustis is now operating as a wholly owned subsidiary of SpaceX, providing industry leading RF filters using patented XBAW technology to help drive the mission of making human life multi-planetary and connecting the world through Starlink. XBAW technology utilizes MEMS-based thin film transfer process, enabling a broad range of piezoelectric material synthesis and compositions tailored for specific application needs with enhanced material properties and an optimized resonator performance including superior figure of merit from coupling and Q factor. Our Device Engineers plays a critical role in developing and improving XBAW resonators and supporting filter designs. This person will perform FEM simulations and experimental DOE to improve the figure of merit of BAW resonators, with an emphasis on developing efficient process integration and reduced cycle time for lean filter development.

Responsibilities

Develop and improve FEA setups (COMSOL, HFSS) for BAW resonator simulations and optimization; Improve the performance of bulk acoustic wave resonators for RF filter applications; Develop and improve thin film bulk acoustic wave resonator process for better performance, accuracy, high yield as well as short cycle time; Support BAW filter design with dimensions and process integration; Define and generate resonator equivalent circuit models to be used in filter design; Plan experimental setups with multiple parameters; Scientific and statistical analysis of RF test results of BAW resonators; Support problem solving in filter design, reliability, and yield improvement

Requirements

Bachelor's degree in an engineering discipline; 1+ years of experience with semiconductor devices, RF, antenna, or communication systems (internship and extracurricular experience is applicable); Must be willing to work extended hours and weekends as needed to meet critical milestones; To conform to U.S. Government export regulations, applicant must be a (i) U.S. citizen or national, (ii) U.S. lawful, permanent resident (aka green card holder), (iii) Refugee under 8 U.S.C. § 1157, or (iv) Asylee under 8 U.S.C. § 1158, or be eligible to obtain the required authorizations from the U.S. Department of State.

Nice to have

Advanced degree in an engineering or STEM discipline; 5+ years of in BAW/MEMS technology; 5+ years of semiconductor device experience; Process experience, academic or industry is preferred; Strong background in RF BAW resonator physics and technology development; Strong background in RF circuits and electromagnetics; Understanding of statistical analysis of characterization and modeling data for evaluation of DoE; Understanding of equivalent device circuit models to support IC designs