Principal Device Design Engineer

Renesas Electronics Americas (REA) is a dynamic, multi-cultural tech company where employees can learn, mentor and thrive. REA brings together the strong financial foundation of a multi-billion dollar global operation and the flexibility and velocity of a smaller organization. We are developing technologies for the latest advances in mobile computing, secured connected devices, autonomous driving, smart homes and factories and more. Our solutions are at the heart of products developed by the major innovators around the world. Join us and be part of what’s next in electronics.
This is an opportunity to join a top-notch low-voltage power MOSFET design team. As part of Renesas’s Mobility, Infrastructure and IoT Power Business Division, this Engineer will work on next-generation power MOSFET products for multiple markets.

Responsibilities

What You'll Do; Develop high-performance power switching devices based on fundamental physical principles and available manufacturing capabilities; Develop proprietary process flows and identify critical design parameters and process variation sensitivities that affect manufacturability; Develop simulation experiments to identify critical process and design parameters and center them for reliability, performance, and manufacturability; Work closely with fab process engineers toward the development of new process recipes and design rules; Develop intelligent process and layout experiments for engineering lots to minimize development cycle time; Execute test mask and product mask layouts with support from CAE team; Identify testing requirements and techniques for new technologies and advise during characterization and testing; Analyze measured data on devices and test structures to optimize device design and process; Provide engineering support for existing power semiconductor products to maintain yield and performance

Requirements

Expertise in one or more of the following areas; Power Semiconductor Devices; Semiconductor Device Physics; Semiconductor Device Reliability; Semiconductor Manufacturing; Materials Science; TCAD modeling and simulation; Device layout; Understanding of switched-mode power applications; Implications of packaging and PCB parasitics during switching; Implications of package and PCB materials on thermal characteristics; Influence of / requirements for MOSFET driver; Desired experience; Demonstrated track record of commercially successful power MOSFET developments; Direct experience in advanced Switching Power MOSFET structures; Education; M.S. or Ph.D. in relevant field with 7+ years’ experience in power semiconductor device engineering