Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer

We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Team . The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with the design, application, and marketing teams, as well as external foundry partners, to drive innovation, optimize performance, and accelerate product industrialization.

Responsibilities

Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology; Set up key process modules required for the development of cutting-edge MV shielded-gate trench MOSFET technologies; Perform wafer probing and analyze assembled product performance data for each development cycle; Analyze wafer-level electrical test results and package-level performance data for each development iteration; Support derivative technology development based on proven technology platforms; Lead yield improvement activities and support technology transfer to mass production; Contribute to the development of derivative products based on established and mature technology platforms

Requirements

Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field; Up to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFETs; Solid understanding of power device physics and semiconductor fabrication processes; Hands-on experience with TCAD tools and simulation-based device analysis; Intermediate-level proficiency in both written and spoken English and Japanese